J. D. Plummer-rekin lankidetzan egindako argitalpenak (3)

2003

  1. Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

    Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168

2002

  1. A physics based approach to ultra-shallow p+-junction formation at the 32 nm node

    Technical Digest - International Electron Devices Meeting