Publicacions en col·laboració amb investigadors/es de Philips Research Eindhoven (7)

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

2006

  1. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  2. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

  4. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology