Gaudencio Paz Martínez-rekin lankidetzan egindako argitalpenak (14)

2024

  1. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420

  2. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562

  3. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  4. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 6044-6048

  5. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

  6. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

  7. Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232

2023

  1. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

    IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135

  2. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  3. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  4. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  2. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

    Sensors, Vol. 22, Núm. 4

2021

  1. Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

    IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139