Enrique
San Andres Serrano
Publications dans lesquelles il/elle collabore avec Enrique San Andres Serrano (10)
2015
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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
Semiconductor Science and Technology, Vol. 30, Núm. 3
2013
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Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
2011
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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon
Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272
2010
2005
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70
2003
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290