Pedro Carlos Feijoo Guerrero-rekin lankidetzan egindako argitalpenak (5)

2015

  1. Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

    Semiconductor Science and Technology, Vol. 30, Núm. 3

2013

  1. Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  2. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2011

  1. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

2010

  1. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions