Publikationen, an denen er mitarbeitet H. Gilmer George (35)

2003

  1. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

  2. Atomistic modeling of amorphization and recrystallization in silicon

    Applied Physics Letters, Vol. 82, Núm. 13, pp. 2038-2040

  3. Monte Carlo modeling of amorphization resulting from ion implantation in Si

    Computational Materials Science

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

2001

  1. Atomistic modeling of amorphization in silicon

    Materials Research Society Symposium - Proceedings

  2. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  3. Stability of defects in crystalline silicon and their role in amorphization

    Physical Review B - Condensed Matter and Materials Physics, Vol. 64, Núm. 4

2000

  1. Atomistic modeling of complex silicon processing scenarios

    Materials Research Society Symposium - Proceedings

  2. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

  3. Simulation of defects and diffusion phenomena in silicon

    MRS Bulletin, Vol. 25, Núm. 6, pp. 45-50

  4. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6

  5. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. Atomistic simulations of ion implantation and diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1998

  1. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  2. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  3. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

  4. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings