Publicacións en colaboración con investigadores/as de Instituto de Ciencias de la Tierra Jaume Almera (19)

2019

  1. The deglaciation of Barton Peninsula (King George Island, South Shetland Islands, Antarctica) based on geomorphological evidence and lacustrine records

    Polar Record, Vol. 55, Núm. 3, pp. 177-188

2018

  1. The Little Ice Age in Iberian mountains

    Earth-Science Reviews, Vol. 177, pp. 175-208

2016

  1. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Nanotechnology, Vol. 27, Núm. 9

2014

  1. Electron density gradients in ammonothermally grown Si-doped GaN

    Applied Physics Express, Vol. 7, Núm. 2

2012

  1. Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

    Journal of Applied Physics, Vol. 111, Núm. 6

2008

  1. Characterization of a long range transport pollution episode affecting PM in SW Spain

    Journal of Environmental Monitoring, Vol. 10, Núm. 10, pp. 1158-1171

  2. Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

    Semiconductor Science and Technology, Vol. 23, Núm. 10

  3. Raman scattering of quasimodes in ZnO

    Journal of Physics Condensed Matter, Vol. 20, Núm. 44

2007

  1. Raman scattering characterization of implanted ZnO

    Materials Research Society Symposium Proceedings

  2. Study of the temperature dependence of E2 and Al(LO) modes in ZnO

    Materials Research Society Symposium Proceedings

  3. Temperature dependence of Raman scattering in ZnO

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 16

2006

  1. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

  2. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  3. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

2005

  1. Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy

    Physica Status Solidi (A) Applications and Materials Science

2004

  1. Optical properties of epitaxial lateral overgrowth GaN structures studied by Raman and cathodoluminescence spectroscopies

    Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3639-3644

2002

  1. Raman scattering by an inhomogeneous plasma in implanted semiconductors

    Solid State Communications, Vol. 121, Núm. 11, pp. 609-613

2001

  1. Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

1999

  1. Characterization of the electron density in si+-implanted inp by means of raman scattering by lo-plasma coupled modes

    Materials Research Society Symposium - Proceedings, Vol. 540, pp. 97-102