AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

  1. El Fatimy, A.
  2. Dyakonova, N.
  3. Meziani, Y.
  4. Otsuji, T.
  5. Knap, W.
  6. Vandenbrouk, S.
  7. Madjour, K.
  8. Théron, D.
  9. Gaquiere, C.
  10. Poisson, M.A.
  11. Delage, S.
  12. Prystawko, P.
  13. Skierbiszewski, C.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2010

Volume: 107

Issue: 2

Type: Article

DOI: 10.1063/1.3291101 GOOGLE SCHOLAR

Sustainable development goals