AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
- El Fatimy, A.
- Dyakonova, N.
- Meziani, Y.
- Otsuji, T.
- Knap, W.
- Vandenbrouk, S.
- Madjour, K.
- Théron, D.
- Gaquiere, C.
- Poisson, M.A.
- Delage, S.
- Prystawko, P.
- Skierbiszewski, C.
Aldizkaria:
Journal of Applied Physics
ISSN: 0021-8979
Argitalpen urtea: 2010
Alea: 107
Zenbakia: 2
Mota: Artikulua