Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

  1. Lechaux, Y.
  2. Fadjie, A.
  3. Bollaert, S.
  4. Talbo, V.
  5. Mateos, J.
  6. González, T.
  7. Vasallo, B.G.
  8. Wichmann, N.
Aktak:
Journal of Physics: Conference Series

ISSN: 1742-6596 1742-6588

Argitalpen urtea: 2015

Alea: 647

Zenbakia: 1

Mota: Biltzar ekarpena

DOI: 10.1088/1742-6596/647/1/012062 GOOGLE SCHOLAR lock_openSarbide irekia editor

Garapen Iraunkorreko Helburuak