Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs
- Lechaux, Y.
- Fadjie, A.
- Bollaert, S.
- Talbo, V.
- Mateos, J.
- González, T.
- Vasallo, B.G.
- Wichmann, N.
ISSN: 1742-6596, 1742-6588
Argitalpen urtea: 2015
Alea: 647
Zenbakia: 1
Mota: Biltzar ekarpena