Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

  1. Stolk, P.A.
  2. Gossmann, H.-J.
  3. Eaglesham, D.J.
  4. Jacobson, D.C.
  5. Rafferty, C.S.
  6. Gilmer, G.H.
  7. Jaraíz, M.
  8. Poate, J.M.
  9. Luftman, H.S.
  10. Haynes, T.E.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1997

Volumen: 81

Número: 9

Pages: 6031-6050

Type: Article

DOI: 10.1063/1.364452 GOOGLE SCHOLAR

Objectifs de Développement Durable