Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures
- Castán, H.
- Dueñas, S.
- Barbolla, J.
Zeitschrift:
Japanese Journal of Applied Physics, Part 2: Letters
ISSN: 0021-4922
Datum der Publikation: 2002
Ausgabe: 41
Nummer: 11 A
Art: Brief