Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

  1. Aboy, M.
  2. Pelaz, L.
  3. Marqués, L.A.
  4. Barbolla, J.
  5. Mokhberi, A.
  6. Takamura, Y.
  7. Griffin, P.B.
  8. Plummer, J.D.
Actes de conférence:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 0780378261

Année de publication: 2003

Volumen: 2003-January

Pages: 151-154

Type: Communication dans un congrès

DOI: 10.1109/SISPAD.2003.1233659 GOOGLE SCHOLAR