Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

  1. Venezia, V.C.
  2. Pelaz, L.
  3. Gossmann, H.-J.L.
  4. Agarwal, A.
  5. Haynes, T.E.
Aldizkaria:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1550-235X,  1098-0121

Argitalpen urtea: 2004

Alea: 69

Zenbakia: 12

Mota: Artikulua

DOI: 10.1103/PHYSREVB.69.125215 GOOGLE SCHOLAR