Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C
- Venezia, V.C.
- Pelaz, L.
- Gossmann, H.-J.L.
- Agarwal, A.
- Haynes, T.E.
ISSN: 1550-235X, 1098-0121
Ano de publicación: 2004
Volume: 69
Número: 12
Tipo: Artigo
Revista:
Physical Review B - Condensed Matter and Materials Physics