Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

  1. Aboy, M.
  2. Pelaz, L.
  3. Ló pez, P.
  4. Bruno, E.
  5. Mirabella, S.
Revue:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

ISSN: 0894-3370,  1099-1204

Année de publication: 2010

Volumen: 23

Número: 4-5

Pages: 266-284

Type: Communication dans un congrès

DOI: 10.1002/JNM.737 GOOGLE SCHOLAR lock_openUVADOC editor