Publikationen, an denen er mitarbeitet V. Hoel (8)

2022

  1. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

    Sensors, Vol. 22, Núm. 4

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3

  2. Stochastic model for action potential simulation including ion shot noise

    Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430

2016

  1. Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

    EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

2001

  1. Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs

    Microelectronics Reliability, Vol. 41, Núm. 1, pp. 73-77

2000

  1. Improved monte carlo algorithm for the simulation of doped ahnas/galnas hemt's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 250-253

  2. Monte Carlo simulator for the design optimization of low-noise HEMTs

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 10, pp. 1950-1956

1999

  1. Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

    Semiconductor Science and Technology, Vol. 14, Núm. 9, pp. 864-870