Publicaciones en colaboración con investigadores/as de University of Helsinki (51)

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

2020

  1. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

  2. Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 38, Núm. 4

  3. Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

    Nanotechnology, Vol. 31, Núm. 19

2019

  1. Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates

    Thin Solid Films, Vol. 669, pp. 294-300

2018

  1. Atomic layer deposition and properties of HFO 2 -Al 2 O 3 nanolaminates

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 9, pp. P501-P508

  2. Electric and magnetic properties of atomic layer deposited ZrO 2 -HfO 2 thin films

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 9, pp. N117-N122

  3. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

  4. Atomic layer deposition and performance of ZrO2-Al2O3 thin films

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 5, pp. P287-P294

  5. Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

    Beilstein Journal of Nanotechnology, Vol. 9, Núm. 1, pp. 119-128

  6. Atomic layer deposition of zirconium dioxide from zirconium tetraiodide and ozone

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 2, pp. P1-P8

  7. Memory maps: Reading RRAM devices without power consumption

    ECS Transactions

  8. Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 8, pp. P402-P409

  9. Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

    ECS Transactions

  10. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

    Journal of Electronic Materials

2017

  1. Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

    ACS Omega, Vol. 2, Núm. 12, pp. 8836-8842

  2. Properties of zirconium oxide and cobalt ferrite layered nanocomposite

    ECS Journal of Solid State Science and Technology, Vol. 6, Núm. 12, pp. P886-P892

2016

  1. A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices

    ECS Transactions

2015

  1. Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films

    Chemical Vapor Deposition, Vol. 21, Núm. 7-9, pp. 181-187

  2. Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

    Microelectronic Engineering, Vol. 147, pp. 55-58