Publicacions en col·laboració amb investigadors/es de Centre National de la Recherche Scientifique (12)

2022

  1. Luminescence in undoped and Nb-doped SrTiO3 crystals: Bulk and surface emission

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 283

2004

  1. Optical and structural characterization of self-organized stacked GaN/AiN quantum dots

    Journal of Physics Condensed Matter

2003

  1. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Correlation between internal electric fields, residual strain and optical transitions in GaN/AlN stacked quantum dots

    Physica Status Solidi C: Conferences

  2. Doping profiles of n-type GaAs layers grown on Si by the conformal method

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422

  3. Optical and structural characterization of GaN/AlN quantum dots grown on Si(111)

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13329-13336

  4. Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

    Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349

  5. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  6. Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050

2001

  1. Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201

  2. Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272

2000

  1. Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

    Journal of Crystal Growth, Vol. 210, Núm. 1, pp. 198-202