Materiales Semiconductores y Nanoestructuras para la Optoelectrónica
Centre National de la Recherche Scientifique
París, FranciaPublications en collaboration avec des chercheurs de Centre National de la Recherche Scientifique (12)
2022
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Luminescence in undoped and Nb-doped SrTiO3 crystals: Bulk and surface emission
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 283
2004
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Optical and structural characterization of self-organized stacked GaN/AiN quantum dots
Journal of Physics Condensed Matter
2003
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Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence
Materials Research Society Symposium - Proceedings
2002
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Correlation between internal electric fields, residual strain and optical transitions in GaN/AlN stacked quantum dots
Physica Status Solidi C: Conferences
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Doping profiles of n-type GaAs layers grown on Si by the conformal method
Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422
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Optical and structural characterization of GaN/AlN quantum dots grown on Si(111)
Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13329-13336
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Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)
Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349
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Study of defects in conformal GaAs/Si layers by optical techniques and photoetching
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050
2001
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Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201
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Self-doping near the seed/layer interface in conformal GaAs layers grown on Si
Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272
2000
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Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman
Journal of Crystal Growth, Vol. 210, Núm. 1, pp. 198-202