Publicacións nas que colabora con Sergio García Sánchez (22)

2024

  1. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562

  2. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  3. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  4. Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5888-5894

  5. Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907

  6. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 6044-6048

  7. Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

2022

  1. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

    Solid-State Electronics, Vol. 193

  2. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2016

  1. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 31, Núm. 6

2015

  1. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  2. Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations

    Journal of Physics: Conference Series

  3. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

    Semiconductor Science and Technology, Vol. 30, Núm. 3

  4. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

    Journal of Applied Physics, Vol. 115, Núm. 4