Publications in collaboration with researchers from University of Lille Nord de France (17)

2024

  1. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  2. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  2. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

2021

  1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  3. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

    Journal of Applied Physics, Vol. 130, Núm. 10

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    Journal of Applied Physics, Vol. 123, Núm. 3

  2. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

    Applied Physics Letters, Vol. 113, Núm. 4

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3

  2. Stochastic model for action potential simulation including ion shot noise

    Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430

2015

  1. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

2014

  1. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

2004

  1. Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications

    IEEE Transactions on Electron Devices, Vol. 51, Núm. 4, pp. 521-528