Publikationen (373) Publikationen von Tomás González Sánchez

2024

  1. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420

  2. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562

  3. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  4. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  5. Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5888-5894

  6. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 5609-5614

  7. Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907

  8. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 6044-6048

  9. On the Asymmetry of Resistive Switching Transitions

    Electronics (Switzerland), Vol. 13, Núm. 13

  10. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

  11. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

  12. Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232

  13. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

    Journal of Applied Physics, Vol. 135, Núm. 4

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

    IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135

  3. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  4. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  5. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  6. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  7. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings