Publicaciones en colaboración con investigadores/as de University of Tartu (59)

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2022

  1. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  2. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

    Nanomaterials, Vol. 12, Núm. 15

  3. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  4. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

    Nanotechnology, Vol. 32, Núm. 33

  3. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  4. Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

    ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163

2020

  1. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

  2. Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 38, Núm. 4

  3. Properties of atomic layer deposited iron oxide and bismuth oxide chloride structures

    Journal of Alloys and Compounds, Vol. 846

  4. Structure and behavior of ZrO2-graphene-ZrO2stacks

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 38, Núm. 6

2019

  1. Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates

    Thin Solid Films, Vol. 669, pp. 294-300

2018

  1. Atomic layer deposition and properties of HFO 2 -Al 2 O 3 nanolaminates

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 9, pp. P501-P508

  2. Electric and magnetic properties of atomic layer deposited ZrO 2 -HfO 2 thin films

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 9, pp. N117-N122

  3. Resistive Switching Properties of Atomic Layer Deposited ZrO 2 -HfO 2 Thin Films

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  4. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings