Guillermo
Vinuesa Sanz
University of Tartu
Tartu, EstoniaPublicaciones en colaboración con investigadores/as de University of Tartu (13)
2023
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Inhomogeneous HfO2layer growth at atomic layer deposition
Journal of Electrical Engineering, Vol. 74, Núm. 4, pp. 246-255
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Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
2022
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
Electronics (Switzerland), Vol. 11, Núm. 3
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Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition
Nanomaterials, Vol. 12, Núm. 15
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Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
Materials, Vol. 15, Núm. 3
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
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Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone
Nanotechnology, Vol. 32, Núm. 33
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
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Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media
ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163