Publikationen, an denen er mitarbeitet Matteo Bosi (9)

2013

  1. Structural characterization of 3C-SiC grown using methyltrichlorosilane

    Materials Science Forum

2012

  1. AFM morphological characterization and Raman study of germanium grown on (111)GaAs

    Surface Science, Vol. 606, Núm. 9-10, pp. 808-812

2010

  1. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Physica Status Solidi (C) Current Topics in Solid State Physics

2009

  1. Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications

    Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859

  2. Strain evaluation in SiC MEMS test structures

    ECS Transactions

2006

  1. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

  2. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2004

  1. Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151

2003

  1. Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials