Matteo
Bosi
Publications dans lesquelles il/elle collabore avec Matteo Bosi (9)
2013
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Structural characterization of 3C-SiC grown using methyltrichlorosilane
Materials Science Forum
2012
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AFM morphological characterization and Raman study of germanium grown on (111)GaAs
Surface Science, Vol. 606, Núm. 9-10, pp. 808-812
2010
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Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE
Physica Status Solidi (C) Current Topics in Solid State Physics
2009
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Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications
Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859
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Strain evaluation in SiC MEMS test structures
ECS Transactions
2006
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Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7
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The properties of GalnP/GaAs heterostructures as a function of growth temperature
Journal De Physique. IV : JP
2004
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Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151
2003
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Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL
Conference Proceedings - International Conference on Indium Phosphide and Related Materials