Publicaciones en las que colabora con Gaudencio Paz Martínez (14)

2024

  1. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420

  2. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562

  3. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  4. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques

  5. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

  6. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

  7. Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232

2023

  1. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

    IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135

  2. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  3. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  4. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  2. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

    Sensors, Vol. 22, Núm. 4

2021

  1. Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

    IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139