Publicaciones en las que colabora con RAY DUFFY (14)

2010

  1. Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Núm. 1, pp. C1A1-C1A6

2009

  1. Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

    Technical Digest - International Electron Devices Meeting, IEDM

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

2006

  1. Boron pocket and channel deactivation in nMOS transistors with SPER junctions

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76

  2. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  2. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

  5. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society

  6. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

  7. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting