University of Surrey-ko ikertzaileekin lankidetzan egindako argitalpenak (4)

2014

  1. Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

    Journal of Applied Physics, Vol. 115, Núm. 14

2007

  1. Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, Núm. 1-2 SPEC. ISS., pp. 152-156

2005

  1. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

  2. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society