Publicacions en què col·labora amb Mireia Bargalló González (29)

2025

  1. Reset transition in HfO2-Based memristors using a constant power signal

    Materials Science in Semiconductor Processing, Vol. 186

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

    Materials Letters, Vol. 357

  3. Neuromorphic Technology Insights in Spain

    Proceedings of the IEEE Conference on Nanotechnology

  4. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  3. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  3. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  4. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  3. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

  5. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

2020

  1. Single and complex devices on three topological configurations of HfO2 based RRAM

    LAEDC 2020 - Latin American Electron Devices Conference

2018

  1. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

    Journal of Applied Physics, Vol. 124, Núm. 15

  2. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

    Journal of Electronic Materials