Publicacions en què col·labora amb Juan J. Barbolla Sancho (139)

2006

  1. A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

    IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350

2005

  1. A comparative study of atomic layer deposited advanced high-k dielectrics

    2005 Spanish Conference on Electron Devices, Proceedings

  2. A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers

    Proceedings of SPIE - The International Society for Optical Engineering

  3. A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

    Computational Materials Science

  4. Amorphous layer depth dependence on implant parameters during Si self-implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Atomistic analysis of annealing behavior of amorphous regions

    2005 Spanish Conference on Electron Devices, Proceedings

  6. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  7. Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

    Computational Materials Science

  8. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  9. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  10. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  11. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  12. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

  13. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  14. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

  15. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

  16. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  17. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  18. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  19. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering