Publicacións en colaboración con investigadores/as de Philips Research Eindhoven (26)

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

  2. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

  3. F+ implants in crystalline Si: The Si interstitial contribution

    Materials Research Society Symposium Proceedings

  4. Si interstitial contribution of F+ implants in crystalline Si

    Journal of Applied Physics, Vol. 103, Núm. 9

2006

  1. Boron pocket and channel deactivation in nMOS transistors with SPER junctions

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76

  2. Fluorine profile distortion upon annealing by the presence of a CVD grown boron box

    AIP Conference Proceedings

  3. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  2. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Boron diffusion in amorphous silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  5. E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  6. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

  7. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society

  8. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

  9. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Boron diffusion in amorphous silicon and the role of fluorine

    Applied Physics Letters, Vol. 84, Núm. 21, pp. 4283-4285

  2. Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

    Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12

  3. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting