Publicacions en col·laboració amb investigadors/es de STMicroelectronics (20)

2014

  1. Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

    Applied Physics Express, Vol. 7, Núm. 2

2010

  1. A solution for an ideal planar multi-gates process for ultimate CMOS?

    Technical Digest - International Electron Devices Meeting, IEDM

2008

  1. Atomistic simulation and subsequent optimization of boron USJ using pre-amorphization and high ramp rates annealing

    Materials Research Society Symposium Proceedings

  2. The role of implanter parameters on implant damage generation: An atomistic simulation study

    AIP Conference Proceedings

2007

  1. Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

    ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

  2. Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

    Journal of Applied Physics, Vol. 101, Núm. 11

2006

  1. Electron mobility in quasi-ballistic Si MOSFETs

    Solid-State Electronics, Vol. 50, Núm. 4, pp. 632-636

  2. Non resonant response to terahertz radiation by submicron CMOS transistors

    IEICE Transactions on Electronics

  3. Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    Applied Physics Letters, Vol. 89, Núm. 25

2005

  1. Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors

    Applied Physics Letters, Vol. 87, Núm. 5

  2. Influence of ballistic and pocket effects on electron mobility in Si MOSFETs

    Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

  3. Non-resonant detection of terahertz radiation by nanometer field effect transistors

    The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005

  4. TeraHertz detectors based on plasma oscillations in nanometric silicon field effect transistors

    Physica Status Solidi C: Conferences

  5. Terahertz emission and detection by plasma waves in nanoscale transistors

    AIP Conference Proceedings

2004

  1. Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors

    Proceedings of IEEE Sensors

  2. Magnetoresistance characterization of nanometer Si metal-oxide- semiconductor transistors

    Journal of Applied Physics, Vol. 96, Núm. 10, pp. 5761-5765

  3. Magnetoresistance mobility measurements in sub 0.1μm Si MOSFETs

    ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

  4. New magneto resistance method for mobility extraction in scaled fully-depleted SOI devices

    2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS

  5. New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices

    Proceedings - IEEE International SOI Conference

  6. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    Applied Physics Letters, Vol. 85, Núm. 4, pp. 675-677