Ingeniería eléctrica, electrónica y telecomunicaciones

1995

1. A comparison between PA‐FTTR and FT‐Raman spectroscopies in the structural analysis of annealed injected‐moulded poly (ethylene terephthalate)

   Macromolecular Symposia, Vol. 94, Núm. 1, pp. 129-144

2. A protective effect of lithium on rat behaviour altered by ibotenic acid lesions of the basal forebrain cholinergic system

   Brain Research, Vol. 695, Núm. 2, pp. 289-292

3. A real-time, unsupervised neural network for the low-level control of a mobile robot in a nonstationary environment

   Neural Networks, Vol. 8, Núm. 1, pp. 103-123

4. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

5. An improved molecular dynamics scheme for ion bombardment simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

6. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

   Applied Physics Letters, pp. 409

7. Calibración precisa de cámaras con modelo de distorsión y reconstrucción robusta de coordenadas tridimensionales

   Informática y automática: revista de la Asociación Española de Informática y Automática, Vol. 28, Núm. 3, pp. 34-41

8. Characterisation of semiconductor structures by high resolution X-ray diffraction

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79

9. Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP

   Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5325-5330

10. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

11. Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices

    Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176

12. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

13. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

14. Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures

    Applied Physics Letters, Vol. 67, pp. 685

15. Instability and chaos in a two-coupler fiber ring resonator

    Fiber and Integrated Optics, Vol. 14, Núm. 4, pp. 331-335

16. La regulación internacional de las operaciones mercantiles enfrentada a un caso extremo: el tráfico transfronterizo de energía eléctrica

    Derecho de los negocios, Año 6, Núm. 58, pp. 9-14

17. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

18. Medidas complementarias al mercado interior de la energía

    Energía: Ingeniería energética y medioambiental, Año 21, Núm. 4, pp. 83-90

19. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

20. Nuevas propuestas para el mercado interior de la energía eléctrica

    Revista de Estudios Europeos, Núm. 9, pp. 91-102