Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

  1. Aboy, M.
  2. Pelaz, L.
  3. Marqús, L.A.
  4. López, P.
  5. Barbolla, J.
  6. Duffy, R.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2005

Volum: 97

Número: 10

Tipus: Article

DOI: 10.1063/1.1904159 GOOGLE SCHOLAR