Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

  1. Aboy, M.
  2. Pelaz, L.
  3. Marqús, L.A.
  4. López, P.
  5. Barbolla, J.
  6. Duffy, R.
Zeitschrift:
Journal of Applied Physics

ISSN: 0021-8979

Datum der Publikation: 2005

Ausgabe: 97

Nummer: 10

Art: Artikel

DOI: 10.1063/1.1904159 GOOGLE SCHOLAR