Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

  1. Aboy, M.
  2. Pelaz, L.
  3. Marqús, L.A.
  4. López, P.
  5. Barbolla, J.
  6. Duffy, R.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2005

Volumen: 97

Número: 10

Type: Article

DOI: 10.1063/1.1904159 GOOGLE SCHOLAR