Ruth Pinacho Gomez-rekin lankidetzan egindako argitalpenak (11)

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  2. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  3. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  4. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

  3. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

  4. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1996

  1. Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT)

    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995

  2. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315