Salvador
Dueñas Carazo
AT and T Bell Laboratories
Newark, EE. UU.Publicacións en colaboración con investigadores/as de AT and T Bell Laboratories (7)
2001
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DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321
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Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric
Solid-State Electronics, Vol. 45, Núm. 8, pp. 1441-1450
2000
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Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress
Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 659-662
1999
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Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances
Materials Research Society Symposium - Proceedings, Vol. 567, pp. 371-378
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Use of anodic tantalum pentoxide for high-density capacitor fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 379-384
1997
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Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828