Óscar
González Ossorio
Publikationen, an denen er mitarbeitet Óscar González Ossorio (13)
2023
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
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Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures
PLoS ONE, Vol. 16, Núm. 9 September 2021
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Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8
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Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
ECS Transactions
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
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Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications
ECS Transactions
2020
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Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films
ECS Transactions
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Single and complex devices on three topological configurations of HfO2 based RRAM
LAEDC 2020 - Latin American Electron Devices Conference