Publicaciones en las que colabora con Juan J. Barbolla Sancho (41)

2005

  1. A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

    Computational Materials Science

  2. Amorphous layer depth dependence on implant parameters during Si self-implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Atomistic analysis of annealing behavior of amorphous regions

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

  5. Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

    Computational Materials Science

  6. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  7. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  8. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  9. Molecular dynamics characterization of as-implanted damage in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  10. Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8

  11. Morphology of as-implanted damage in silicon: A molecular dynamics study

    2005 Spanish Conference on Electron Devices, Proceedings

  12. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3

  13. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  14. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Atomistic analysis of the ion beam induced defect evolution

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  2. Atomistic analysis of the role of silicon interstitials in boron cluster dissolution

    Materials Research Society Symposium - Proceedings

  3. Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  5. Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers

    Materials Research Society Symposium - Proceedings

  6. Ion-beam-induced amorphization and recrystallization in silicon

    Journal of Applied Physics, Vol. 96, Núm. 11, pp. 5947-5976