Ruth Pinacho Gomez-rekin lankidetzan egindako argitalpenak (11)

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

  3. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

  4. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109