Guillermo Vinuesa Sanz-rekin lankidetzan egindako argitalpenak (28)

2025

  1. Reset transition in HfO2-Based memristors using a constant power signal

    Materials Science in Semiconductor Processing, Vol. 186

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

    Materials Letters, Vol. 357

  3. On the Asymmetry of Resistive Switching Transitions

    Electronics (Switzerland), Vol. 13, Núm. 13

  4. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  3. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  5. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  3. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

    Nanomaterials, Vol. 12, Núm. 15

  4. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  5. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  6. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

    Nanotechnology, Vol. 32, Núm. 33

  3. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  4. Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

    ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163