Publicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (35)

2018

  1. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

    Journal of Electronic Materials

2016

  1. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Nanoscale Research Letters, Vol. 11, Núm. 1

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

  3. Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

    Semiconductor Science and Technology, Vol. 30, Núm. 3

2013

  1. Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  2. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

  3. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

2011

  1. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351

2005

  1. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

  2. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings