Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

  1. Martínez, O.
  2. Avella, M.
  3. De La Puente, E.
  4. Jiménez, J.
  5. Gérard, B.
  6. Gil-Lafon, E.
Aldizkaria:
Journal of Crystal Growth

ISSN: 0022-0248

Argitalpen urtea: 2000

Alea: 210

Zenbakia: 1

Orrialdeak: 198-202

Mota: Artikulua

DOI: 10.1016/S0022-0248(99)00678-8 GOOGLE SCHOLAR

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