Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

  1. Martínez, O.
  2. Avella, M.
  3. De La Puente, E.
  4. Jiménez, J.
  5. Gérard, B.
  6. Gil-Lafon, E.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 2000

Volumen: 210

Número: 1

Pages: 198-202

Type: Article

DOI: 10.1016/S0022-0248(99)00678-8 GOOGLE SCHOLAR

Objectifs de Développement Durable