Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

  1. Ardila, A.M.
  2. Martínez, O.
  3. Avella, M.
  4. Jiménez, J.
  5. Gérard, B.
  6. Napierala, J.
  7. Gil-Lafon, E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2002

Volume: 91

Issue: 8

Pages: 5045-5050

Type: Article

DOI: 10.1063/1.1462849 GOOGLE SCHOLAR