Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

  1. Ardila, A.M.
  2. Martínez, O.
  3. Avella, M.
  4. Jiménez, J.
  5. Gérard, B.
  6. Napierala, J.
  7. Gil-Lafon, E.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2002

Volumen: 91

Número: 8

Pages: 5045-5050

Type: Article

DOI: 10.1063/1.1462849 GOOGLE SCHOLAR