Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

  1. Ardila, A.M.
  2. Martínez, O.
  3. Avella, M.
  4. Jiménez, J.
  5. Gérard, B.
  6. Napierala, J.
  7. Gil-Lafon, E.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2002

Alea: 91

Zenbakia: 8

Orrialdeak: 5045-5050

Mota: Artikulua

DOI: 10.1063/1.1462849 GOOGLE SCHOLAR